Product Detail
Fully automatic single crystal growth furnace
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Fully automatic single crystal growth furnace

Number:KX360PV/ KX380PV
Type:Silicon wafer equipment
Development:Kayex Business Division
Detailed introduction

Parameter attribute

Diameter of furnace chamber 1400/1600mm

Height of auxiliary room is 5500mm (1.6m extension is available)

Diameter of throat 350-410mm (customizable)

Stroke of the crucible is 650/800mm; the crucible is compatible with up to 40''

Feed amount 800-1000KG

Equipment weight: 12t

Advantages

The bearing of the lower bearing is designed for the use of large-scale thermal fields;

Tungsten wire ropes with different wire diameters can be changed, the weight of the mechanism can be reduced with patented technology to increase the service life of the crystal rope;

Explosion-proof pressure relief port is reliable;

High-strength frame, the deformation is minimized;

The water-cooled heat shield alone supplies water to increase the growth rate of single crystal;

Siemens PLC control system, stable and reliable;

The intelligent vision system automatically monitors the melting of silicon materials, the temperature adjustment time is greatly reduced, and the crystal diameter of key process links is automatically measured and controlled;

Connect with 240 units for remote monitoring, with complete functions;

Use CGSIM software to simulate, analyze and optimize the thermal field;

Lead time

Standardized product: Delivery within 60 days after advance payment. Expedition is available according to the inventory and the quantity required; standard pricing

Customized product: Depending on the product, under normal circumstances, delivery in 90 days after advance payment; pricing is based on cost