Parameter attribute
①Maximum working temperature: Preheat chamber 400°C, vacuum chamber 300°C
②Ultimate vacuum: ≤1Pa
③Coating thickness: 5~10nm
④Capacity: 12000P/hr
⑤Pressure rise rate: 1Pa/hr
Advantages
①Fast heating and the temperature distribution in the cavity is uniform.
②The growth film thickness can be precisely controlled, with a uniformity of within 1nm.
③Good vacuum tightness and low leakage rate.
④After the process film is formed on the silicon wafer, it will be cooled down quickly.
⑤Loading and unloading is fast with high production efficiency.
⑥Take up small space, energy saving and reliable.
⑦Low consumption of special gas, effectively reducing production costs
Benefits
①166~177 silicon wafers, coating 16000 pieces per hour;
②177~182 silicon wafers, coating 12000 pieces per hour;
③182 and above silicon wafers, coating 11,000 pieces per hour.
Lead time
①100 days after advance payment
