Parameter attribute
①Model: CG6000;
②Inner diameter of furnace: φ762mm;
③Size of auxiliary room vertical hinged door: Width 310mm, height 1730mm;
④Diameter of throat: φ305mm;
⑤Lift speed of seed crystal: 0~508mm/hr or ± 0.51 mm/hr, whichever is faster;
⑥Lift speed of seed crystal (rated): 400mm/min
⑦Seed rotation speed and precision: 0~50 RPM±1%S.P, or ±0.05RPM, whichever is faster
⑧Crucible lifting speed and accuracy: 0-127 mm/hr ± 1% S.P,or ± 0.25 mm/hr, whichever is faster;
⑨Lift speed of crucible (rated): 127mm/min
⑩Crucible lifting rotate speed and accuracy: 0-30 RPM ± 1% S.P, or± 0.03 RPM, whichever is faster;
⑪Power type: IGBT, with optional harmonic control function;
⑫Filtering tank: Ordinary type (optional self-cleaning type);
⑬Main pump: Oil pump (variable frequency), auxiliary pump: Oil pump
⑭Drawable crystal diameter: 6''~8'';
⑮Drawable crystal type: N type/P type;
⑯Thermal field size: 18'';
17 Loading capacity: 70kg.
Advantages
①Application: Light doping, heavy doping;
②Cavity material: Inner layer: Imported 316L stainless steel, outer layer: 304L stainless steel;
③Chamber cleanliness: The mirror surface is precisely polished, suitable for the growth of heavily doped and lightly doped silicon single crystals;
④Excellent rigidity performance of the machine;
⑤Vibration and cooling water turbulence isolation technology caused by moving parts;
⑥Shielding gas intake: 1) One each inside and outside the water cooling jacket,
⑦2) one at the top of the auxiliary furnace room;
⑧Application of high-precision gas mass flowmeter + imported vacuum gauge + high-precision butterfly valve, gas mass flowmeter: Flow accuracy: ± 0.2% F.S; pressure accuracy: ± 0.5%;
⑨Parallel double tank online automatic switching, gas purging online cleaning system;
⑩Imported load cell: Accurary +/- 0.5kg;
⑪Increase camera temperature measurement and temperature adjustment functions (visual diameter measurement, liquid level measurement and temperature measurement);
⑫The dynamic data of the relative position of the liquid surface and the guide cylinder is collected and recorded throughout the process;
⑬Alarm and safety protection: Abnormal drop in liquid level, abnormal temperature at the evacuation port, abnormal pressure in the furnace, overtemperature of cooling water, power failure;
⑭The crystal pulling processes such as crystal pulling broken edge remelting and silicon material reinvestment can be completed automatically;
⑮Constant pulling speed equal diameter control;
⑯Neck automatic preheating, welding and temperature adjustment;
⑰Self-verification of the whole machine, thermal field and crystal growth process technology verification, and basic thermal field and crystal growth process;
⑱Leaing CCz system, crystal growth process and control technology;
⑲Application of CCz technology, OEM by a chip manufacturer;
⑳Solid continuous doping: Red phosphorus;
21Crystal resistivity: Min: 1mΩ*cm; (it is generally Min: 2mΩ*cm)
Lead time
①90 days after advance payment of main equipment (auxiliary equipment and important auxiliary materials depend on market conditions)
