Parameter attribute
①Model: KX240(1200)MCZ;
②Inner diameter of furnace: φ1200mm;
③Inner diameter of auxiliary room: φ400mm
④Height of auxiliary room: 3000mm-4000mm customizable;
⑤Diameter of throat: φ400mm;
⑥Lift speed of seed crystal: 0~508mm/hr or ± 0.25 mm/hr, whichever is faster;
⑦Lift speed of seed crystal (rated): 400mm/min
⑧Seed rotation speed and precision: 0~30 RPM±1%S.P, or ±0.05RPM, whichever is faster
⑨Crucible lifting speed and accuracy: 0-127 mm/hr ± 1% S.P,or ± 0.25 mm/hr, whichever is faster;
⑩Lift speed of crucible (rated): 127mm/min
⑪Crucible lifting rotate speed and accuracy: 0-20 RPM ± 1% S.P, or± 0.03 RPM, whichever is faster;
⑫Power type: IGBT, with optional harmonic control function;
⑬Filtering tank: Optional configurations such as self-cleaning type and two parallel installations;
⑭Main pump: Dry vacuum pump (variable frequency), auxiliary pump: Oil pump/multi-split dry vacuum pump;
⑮Drawable crystal diameter: up to 12'';
⑯Drawable crystal type: N type/P type;
⑰Thermal field size: 26'';
⑱Loading capacity: 330kg.
Advantages
①Application: Heavy doping;
②Cavity material: Inner layer: Imported 316L stainless steel, outer layer: 304L stainless steel;
③Chamber cleanliness: The mirror surface is precisely polished, suitable for the growth of heavily doped and lightly doped silicon single crystals;
④Excellent rigidity performance of the machine;
⑤Vibration and cooling water turbulence isolation technology caused by moving parts;
⑥Shielding gas intake: 1) One each inside and outside the water cooling jacket, 2) one at the top of the auxiliary furnace room;
⑦Application of high-precision gas mass flowmeter + imported vacuum gauge + high-precision butterfly valve, gas mass flowmeter: Flow accuracy: ± 0.2% F.S; pressure accuracy: ± 0.5%;
⑧Parallel double tank online automatic switching, gas purging online cleaning system;
⑨Imported load cell: Accurary +/- 0.5kg;
⑩Increase camera temperature measurement and temperature adjustment functions (visual diameter measurement, liquid level measurement and temperature measurement);
⑪The dynamic data of the relative position of the liquid surface and the guide cylinder is collected and recorded throughout the process;
⑫Alarm and safety protection: Abnormal drop in liquid level, abnormal temperature at the evacuation port, abnormal pressure in the furnace, overtemperature of cooling water, power failure;
⑬The crystal pulling processes such as crystal pulling broken edge remelting and silicon material reinvestment can be completed automatically;
⑭Constant pulling speed equal diameter control;
⑮Neck automatic preheating, welding and temperature adjustment;
⑯Self-verification of the whole machine, thermal field and crystal growth process technology verification, and basic thermal field and crystal growth process;
⑰Leaing CCz system, crystal growth process and control technology;
⑱Application of CCz technology, OEM by a chip manufacturer;
⑲Solid continuous doping: Red phosphorus;
⑳Crystal resistivity: Min: 1mΩ*cm; (it is generally Min: 2mΩ*cm).
