Product Detail
Crystal growth furnace KX320-600
Share to:

Crystal growth furnace KX320-600

Number:KX320-600
Type:Silicon (germanium) - based semiconductors
Development:研发中心事业部&美国LCT
Detailed introduction

Parameter attribute

Model: KX320-600;

Diameter of furnace chamber: φ1300mm;

Height of lower furnace: 400mm;

Height of upper furnace: 1249mm;

Location of pyrometer: 836mm above the furnace base;

Diameter of lower auxiliary furnace chamber: φ650mm;

Height of lower auxiliary room: 2000mm;

Diameter of upper auxiliary furnace chamber: 350mm;

Height of upper auxiliary room: 1200mm;

Diameter of rotary disc valve throat: φ650mm;

Lift speed of seed crystal: 0~508mm/hr;

Lift speed of seed crystal (rated): 400mm/min;

Seed rotation speed and precision: 0~30 RPM±1% S.P.or ±0.05RPM, whichever is faster

Crucible lifting speed and accuracy: 0-127 mm/hr ± 1% S.P.or ± 0.25 mm/hr, whichever is faster;

Lift speed of crucible (rated): 127mm/min;

Crucible lifting rotate speed and accuracy: 0-20 RPM ± 1% S.P, or± 0.03 RPM, whichever is faster;

Light port: The light port can be set up on the top of the auxiliary chamber, the upper part of the furnace cover, and the side of the main furnace chamber, with standard CCD temperature measurement system.

Advantages

The world's first drawing 24'' single crystal furnace;

The diameter of the throat is 650mm, and can draw up to 600mm single crystal silicon rod;

It can be set up with built-in quartz cylinder feeder for drawing multiple crystal rods in one furnace;

It's provided with water cooling plate to improve the production efficiency.

The installation space of the magnetic field lifting mechanism can be reserved.

Lead time

90 days after advance payment of main equipment (auxiliary equipment and important auxiliary materials depend on market conditions)