Parameter attribute
①Model: CCz-140;
②Inner diameter of furnace: φ1400mm;
③Height of auxiliary room: 3500 ~5000mm customizable;
④Diameter of throat: φ350mm;
⑤Lift speed of seed crystal: 0~508mm/hr;
⑥Lift speed of seed crystal (rated): 400mm/min
⑦Seed rotation speed and precision: 0~30 RPM±1%S.P, or ±0.05RPM, whichever is faster
⑧Crucible lifting speed and accuracy: 0-127 mm/hr± 1% S.P,or ± 0.25 mm/hr, whichever is faster;
⑨Lift speed of crucible (rated): 127mm/min
⑩Crucible lifting rotate speed and accuracy: 0-20 RPM ± 1% S.P, or± 0.03 RPM, whichever is faster;
⑪Size of feeding device: 1870×1500×2300mm;
⑫Compatible with 24-34 inch RCz and 32-34 inch CCz thermal field, capable of pulling crystals with diameter smaller than 10''
⑬Heating mode: Resistance heating, DC power supply Pmax=150:50Kw, frequency 50Hz.
⑭Temperature monitoring: CCD visual liquid level temperature control, optional infrared liquid level, thermal field temperature measurement.
⑮Pressure control: Ultimate vacuum ≤ 20mtorr; leak rate ≤ 1mtorr/min, dynamic pressure control fluctuation range ± 0.1torr.
⑯Loading mode: Side continuous external feeding device in the main furnace chamber (capacity 1200kg) + dynamic online silicon material replenishment device + pre-installation in the quartz crucible; the feeding speed can be linearly adjusted within the range of 20g-600g/min, and the control accuracy is ≤500g/Hours.
⑰Control system: On the basis of the RCz control system independently developed by KAYEX, the independent CCz process closed-loop control module was developed and expanded in the secondary development. The system is compatible and free to switch closed-loop control of two completely different crystal growth processes.
Advantages
①Automatic continuous feeding system: Lateral large-capacity high-precision continuous feeding control device, dynamic feeding rate is linearly controllable with high precision. It can be seamlessly connected with the single crystal furnaces in the industry that have reserved side feeding ports. It supports CCZ continuous feeding and one-to-many RCZ external secondary feeding.
②Automatic continuous doping system: According to the change of feeding weight, closed-loop dynamics, and proportional doping, the doping dose weight accuracy is 0.01g, with the error <0.2%, and the doping rate is adjustable. Both master alloy doping and element doping can be precisely controlled.
③CCz crystal growth process: Continuous feeding Czochralski process and supporting doping system can realize precise control of silicon crystal resistance with different doping types; the maximum theoretical solid solution limit doping concentration of elements in silicon is avaialble in P/N type heavy doping through special process control.
④The CCz process automatically and continuously feeds the growth crystal, without the secondary feeding link of RCz, which significantly improve the effective utilization rate of equipment and save the cost of manpower and material resources in the secondary feeding link, making it suitable for the layout of less-manned centralized control single crystal growth workshop that the industry is promoting.
⑤The resistivity distribution of crystal growth in the CCz process is not affected by the segregation coefficient of doping elements, and crystals with uniform distribution of radial and longitudinal resistance can be grown. The crystal growth length only depends on the weight limit of the seed crystal and the upper bearing, the proportion of the isodiametric time in the process time is greatly increased, making for better per unit yield efficiency and resistivity control.
⑥The capacity increase of the CCz crystal growth process does not depend on the crucible feeding amount, the furnace body, and the size expansion of the thermal field. If it is promoted on a large scale, the cost of the thermal field of the same size is 20% lower than that of RCz. Compared with the 36'' or large thermal field of RCz, it's more likely to get cost reduction.
⑦The CCZ process and equipment developed by us are compatible with the stock single crystal furnaces in the industry equipped with reserved holes for side feeding in the furnace chamber. In the future, customers can freely switch existing equipment between RCz and CCz
Benefits
①CCz-140 continuous feeding crystal growth furnace is suitable for growing P/N silicon single crystal with high quality and narrow resistivity distribution. With the process package independently developed by our company, we have successfully grown 10'' gallium-doped P-type crystal with resistivity of 0.6-0.7ohm.cm and 8'' phosphorus-doped N-type heavy-doped semiconductor with resistivity of 0.001ohm.cm. Crystals. N-type heavily doped crystals have been tested and supplied to customers in batches.
