Parameter attribute
①Cavity pressure rise rate: ≤5Pa/12 h (after calcining);
②Model: PVT-MF-50;
③Size: Length × Width × Height of whole machine = 3200×1150×3600mm;
④Inner diameter of furnace: φ400mm;
⑤Ultimate vacuum; 5 x 10-4 Pa (1.5h after the molecular pump starts);
⑥Stroke of induction coil: 200mm;
⑦Stroke of furnace base: 1250mm;
⑧Heating mode: Induction heating,
⑨Maximum furnace temperature: 2400℃;
⑩Heating power supply: Pmax=40Kw, frequency 8-12KHz;
⑪Temperature measurement method: Two-color infrared temperature measurement;
⑫Temperature range: 900-3000℃;
⑬Temperature accuracy: ±1℃;
⑭Pressure range: 1-700mbar;
⑮Pressure accuracy: 1-10mbanr, ±0.5%F.S;
10-100mbanr，±0.5%F.S；
100-700mbanr，±0.5%F.S；
⑯Loading mode: Bottom loading, easy and safe operation;
⑰Optional: Crucible rotation, double temperature measuring points.
Advantages
①For 6''/8'' crystal growth;
②For the semi-insulating and conductive crystal growth, the crucible rotates to improve temperature uniformity, and the coil lifts to reduce disturbance;
③Designed with double-layer quartz tube water-cooling structure to improve the life of the chamber and provide a stable crystal growth environment, which is conducive to the growth of high-quality crystals;
④Real-time and accurate monitoring of upper and lower temperatures facilitates process debugging;
⑤Optional constant power, constant current, constant temperature working mode;
⑥One-button start, reducing manual intervention and facilitating large-scale production;
⑦PVT-MF-50 silicon carbide induction crystal growth furnace is suitable for growing high-quality 6'' silicon carbide single crystal, high-purity silicon carbide raw material synthesis, crystal annealing and other fields;
⑧Compact arrangement to improve the utilization rate of the plant;
⑨High-precision butterfly valve and mass flow meter are used to control the grown crystal pressure in the furnace to provide stable grown crystal atmosphere. The pressure control accuracy is up to ±1Pa under the crystal growth pressure.
