Parameter attribute
①Model: PVT-RSMF-36;
②Size: Length × Width × Height of whole machine = 2800×1350×3660mm;
③Inner diameter of furnace: 900mm;
④Ultimate vacuum; 6 x 10-4 Pa (1.5h after the molecular pump starts)
⑤Cavity pressure rise rate: ≤5Pa/12 h (after calcining)
⑥Lifting stroke of crucible shaft: 100mm;
⑦Stroke of upper furnace chamber: 1100mm;
⑧Rotate speed of crucible shaft: 0.05-5rpm;
⑨Heating mode: Resistance or induction heating
⑩Maximum furnace temperature: 2500℃
⑪Standard heating power supply: 50kW+20kW
⑫Temperature measurement method: Two-color infrared temperature measurement;
⑬Temperature range: 900-3000℃;
⑭Temperature accuracy: ±1℃
⑮Pressure range: 1-700mbar;
⑯Pressure accuracy: 1-10mbanr, ±0.5%F.S
10-100mbanr，±0.5%F.S
100-700mbanr，±0.5%F.S
⑰Optional: Double temperature measuring points, multiple heaters.
Advantages
①The equipment can be arranged in parallel to improve the utilization rate of the plant;
②Compatible with resistance or induction heating field.
③It can be provided with multiple heaters and controlled independently. The process debugging window is large, and the heaters are independently controlled, which is convenient for simultaneous control of axial and radial temperature gradients;
④Bottom water-cooled crucible shaft is fitted with hollow temperature measuring hole. The top, bottom, and side can be equipped with infrared temperature measurement, which is convenient for temperature field monitoring and process debugging;
⑤Optional constant power, constant current, constant temperature working mode;
⑥Meet the needs of 6'' -8'' semi-insulating/conducting crystal growth;
⑦With crucible rotation function, with precision of 0.01rpm, which is convenient to create a uniform temperature environment in the radial direction to meet the growth of thick crystals;
⑧PVT-RS-40 silicon carbide resistive crystal growth furnace is suitable for growing high-quality 6''-8'' silicon carbide single crystal, high-purity silicon carbide raw material synthesis, crystal annealing and other fields;
⑨High-precision butterfly valve and mass flow meter are used to control the grown crystal pressure in the furnace to provide stable grown crystal atmosphere;
⑩Loading mode: Top loading, easy and safe operation.
