Parameter attribute
①Model: CSG-PC-110;
②Size: Length × Width × Height of whole machine = 4000×3400×4300mm;
③Inner diameter of furnace: 1100mm;
④Loading capacity: 50kg;
⑤Ultimate vacuum; 10-2 Pa (2h after the molecular pump starts);
⑥Cavity pressure rise rate: ≤10Pa/ h (after calcining);
⑦Lifting stroke of lower furnace cover: 1500mm;
⑧Heating mode: Induction heating,
⑨Maximum furnace temperature: 2400℃;
⑩Heating power supply: 2X40kW;
⑪Temperature measurement method: Two-color infrared temperature measurement;
⑫Temperature range: 900-3000℃;
⑬Temperature accuracy: ±1℃;
⑭Pressure range: 1-700mbar;
⑮Pressure accuracy: 1-5mbar±0.1mbar;
5-100mbar ±0.2mbar ；
100-700mbar ±0.5mbar；
⑯Loading mode: Bottom loading;
⑰Optional: Double temperature measuring points, unloading forklift.
Advantages
①The loading capacity is large, and one device can be used for multiple crystal growth furnaces to improve production efficiency;
②Driven by 1-to-2 power supply with the same frequency to control the axial temperature gradient;
③The top and bottom is equipped with infrared temperature measurement, which is convenient for temperature field monitoring and process debugging;
④High vacuum, high pressure control precision and high temperature control precision for synthesizing high-purity silicon carbide raw materials;
⑤Bottom-in and bottom-out loading and unloading, it is safe and reliable, which can be done with unloading forklifts;
⑥High-precision butterfly valve and mass flow meter are used to control the pressure in the furnace to provide stable process atmosphere;
⑦The equipment is arranged in parallel to save space and improve the utilization rate of the plant.
